A generalized super AKNS hierarchy associated with orthosymplectic Lie superalgebra OSP(2,2) and its super bi-Hamiltonian structures

For the orthosymplectic Lie superalgebra $\text{◂⋅▸}OSP(2,2)$, we choose a set of basis matrices. A linear combination of those basis matrices presents a spatial spectral matrix. The compatible condition of the spatial part and the corresponding temporal parts of the spectral problem leads to a generalized super AKNS (GSAKNS) hierarchy. By making use of the supertrace identity, the obtained GSAKNS hierarchy can be written as the super bi-Hamiltonian structures.     

Dynamic analysis of the double crank mechanism with a 3D translational clearance joint employing a variable stiffness contact force model

Nonlinear Dynamics - Oblique collisions are more likely to happen in the realistic translational joint with clearance, compared to the full front impacts. It can be a quite demanding task to...     

A New Radar-Signal Parameter for Recognition of Wind-Related Weather Hazards

Radiophysics and Quantum Electronics - Wind-related weather hazards remain difficult to recognize targets for weather radars. Methods that use estimates of the width of the reflected-signal...     

Optical Multisensor Systems in Analytical Spectroscopy

Journal of Analytical Chemistry - A review of works in developing optical multisensor systems, a new class of specialized spectroscopic analyzers, is presented. The development and use of such...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Asymptotic Behavior of Least Energy Solutions for a Fractional Laplacian Eigenvalue Problem on ℝN

Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}...     

Numerical Simulation of Physical Fields by the Collocation Method

Russian Physics Journal - The article describes the collocation method for the numerical solution of mathematical physics boundary value problems. By arranging the collocation nodes in a special...     

狄拉克材料BaMnBi2的单晶制备和物理性质研究

在本工作中,我们成功制备了层状过渡金属磷族化合物BaMnBi2单晶样品,并研究了该化合物的磁学性质和电学输运性质.准二维化合物BaMnBi2具有四方晶体结构,主要包含有两个Bi四方格子层和一个共边的MnBi4四面体层.磁化率显示BaMnBi2在TN ＝288 K以下发生反铁磁相变,并表现出很强的磁各向异性.在反铁磁相变温度TN 以上,磁化率随温度呈线性关系,暗示体系在顺磁态具有很强的反铁磁关联.电阻率随温度变化曲线和在磁场下电阻率随角度的变化曲线都表明BaMnBi2具有准二维的电子结构.磁场导致的金属-绝缘体转变和低温下大的非饱和线性磁阻,与Bi四方格子层存在狄拉克费米子是一致的.